SEOUL, South Korea--(BUSINESS WIRE)-- Magnachip Semiconductor Corporation (MX) (“Magnachip” or the “Company”) today announced it has concluded an agreement with Hyundai Mobis Company Limited ...
Magnachip Semiconductor has developed a 1,200-V, 75-A insulated gate bipolar transistor (IGBT) in a TO-247PLUS package for applications that depend on strict power ratings and high efficiency. Meeting ...
Recent developments in IGBT and FWD (free wheeling diode) devices are enabling designers to achieve higher switching performance, lower electrical losses, and higher temperature operation in high ...
Given the many varieties of advanced power devices available, choosing the right power device for an application can be a daunting task. For solar inverter applications, it is well known that ...
Renesas Electronics Corp. has announced the development of a new series of silicon (Si) insulated gate bipolar transistors (IGBTs) with low power losses in a small footprint. Targeting next-generation ...
TOKYO--(BUSINESS WIRE)--Renesas Electronics Corporation (TSE: 6723), a premier supplier of advanced semiconductor solutions, announced the development of a new generation of Si-IGBTs (Silicon ...
As environmental impacts from climate change are becoming more severe, the use of renewable energy like solar power continues to expand globally to reduce carbon emissions. Omdia, a market research ...
Infineon has introduced an IGBT power module tailored to the needs of electric vehicle traction inverters in the 80 kW to 100 kW power class: the HybridPACK DC6i. This six pack module is optimized to ...
Toshiba's Storage & Electronic Devices Solutions Company has announced the launch of the TB9150FNG, an opto-isolated IGBT gate pre-driver IC with various enhanced protective functions for the ...
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